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Número de pieza | MS13N30 | |
Descripción | N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Bruckewell | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MS13N30 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are lower voltage application, power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones
Features
• Low rDS(on) trench technology
• Fast switching speed
• Low thermal impedance
• RoHS compliant package
Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS13N30]
© Bruckewell Technology Corporation Rev. A -2014
1 page MS13N30
N-Channel 30-V (D-S) MOSFET
■Typical Electrical Characteristics
FIG.7-GATE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TEMPERATURE
FIG.9-SAFE OPERATING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS13N30]
© Bruckewell Technology Corporation Rev. A -2014
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MS13N30.PDF ] |
Número de pieza | Descripción | Fabricantes |
MS13N30 | N-Channel 30-V (D-S) MOSFET | Bruckewell |
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