파트넘버.co.kr K4174 데이터시트 PDF


K4174 반도체 회로 부품 판매점

Silicon N-channel enhancement MOS FET



Panasonic 로고
Panasonic
K4174 데이터시트, 핀배열, 회로
Power MOS FETs
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174
Silicon N-channel enhancement MOS FET
For high speed switching circuits
Features
Gate-source surrender voltage VGSS : ±25 V guaranteed
Avalanche energy capability guaranteed: EAS > 216 mJ
High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current *
Avalanche energy capability
VDSS
VGSS
ID
IDP
EAS
110
±25
±28
±130
216
V
V
A
A
mJ
Avalanche energy capability *
EAR 69
mJ
40 W
Drain power dissipation
Ta = 25°C
PD
2.0
W
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *: Assurance of repetitive pulse. (Repetitive period 5 ms on-duty 20%)
But, it must stay within 40% of all that the time impressed pulse repetitively.
Package
Code
TO-220D-A1
Pin Name
1: Gate
2: Drain
3: Source
Marking Symbol: K4174
Internal Connection
D
G
S
T 5.0 µs, On-duty 20%
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
VDSS
IDSS
IGSS
ID = 1 mA, VGS = 0
VDS = 88 V, VGS = 0
VGS = ±25 V, VDS = 0
Gate threshold voltage
Vth VDS = 10 V, ID = 1.0 mA
Drain-source ON resistance
Forward transfer conductance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RDS(on)
Yfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS = 10 V, ID = 14.0 A
VDS = 10 V, ID = 14.0 A
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 30 V, ID = 14.0 A
RL 2.2 W, VGS = 10 V
Min Typ Max
110
1.0
±1.0
2.0 4.0
38 52
14 21
1 500
500
180
30
50
150
90
Unit
V
mA
mA
V
mW
S
pF
pF
pF
ns
ns
ns
ns
Publication date: February 2009
SJG00045AED
1


K4174 데이터시트, 핀배열, 회로
2SK4174
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics (continued) TC = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode forward voltage
VDSF IDR = 28 A, VGS = 0
1.0 1.4
V
Reverse recovery time
Reverse recovery charge
trr L = 230 mH, VDD = 100 V
Qrr IDR = 14.0 A, di / dt = 100 A/ms
75 ns
0.3 nC
Gate charge load
Qg
64 nC
Gate-source charge
Qgs VDD = 30 V, ID = 14.0 A, VGS = 10 V 6.0 nC
Gate-drain charge
Qgd
28.5 nC
Thermal resistance (ch-c)
Rth(ch-c)
3.13 °C/W
Thermal resistance (ch-a)
Rth(ch-a)
62.5 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2SK4174_PC-Ta
PC Ta
100
80
60
40 TC = Ta
20
Without a heat shink
0
0 50 100
150
Ambient temperature Ta (°C)
103
IDP
102
ID
10
1
2SK4174_ID-VDS
Safe operation area
Non repetitive pulse
TC = 25°C
t = 1.0 µs
100 µs
1 ms
DC
10 ms
101
1
10 102 103
Drain-source voltage VDS (V)
2 SJG00045AED




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K4174 mosfet

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Silicon N-channel enhancement MOS FET - Panasonic