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PDF STE145N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STE145N65M5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STE145N65M5
N-channel 650 V, 0.012 Ω typ., 143 A MDmesh™ M5
Power MOSFET in an ISOTOP package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @ TJmax RDS(on) max.
ID
STE145N65M5
710 V
0.015 Ω 143 A
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STE145N65M5
Table 1: Device summary
Marking
Package
145N65M5
ISOTOP
Packaging
Tube
November 2015
DocID025538 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STE145N65M5
Symbol
Parameter
td(V) Voltage delay time
tr(V) Voltage rise time
tf(i) Current fall time
tC(off) Crossing time
Table 6: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD = 400 V, ID = 85 A
- 255 -
RG = 4.7 Ω, VGS = 10 V
- 11 -
(see Figure 16: "Test circuit for
inductive load switching and
- 82 -
diode recovery times" and
Figure 19: "Switching time
- 88 -
waveform")
ns
ns
ns
ns
Table 7: Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM,(1)
VSD (2)
trr
Qrr
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
VGS = 0 V, ISD = 143 A
ISD = 143 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
trr Reverse recovery time
ISD = 143 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 100 V, Tj = 150 °C
(see Figure 16: "Test circuit for
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
Min. Typ. Max. Unit
- 143 A
- 572 A
- 1.5 V
- 568
ns
- 14.5
µC
- 51
A
- 728
- 24.5
ns
µC
- 67
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID025538 Rev 2
5/13
5 Page 
STE145N65M5
Dim.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
ØP
P1
S
Table 8: ISOTOP mechanical data
mm
Min.
Typ.
11.80
8.90
7.80
0.75
1.95
37.80
31.50
25.15
23.85
14.90
12.60
3.50
4.10
4.60
4
4
30.10
24.80
Package information
Max.
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
15.10
12.80
4.30
4.30
5
4.30
4.40
30.30
DocID025538 Rev 2
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STE145N65M5.PDF ] | |
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