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ROHM Semiconductor |
RQ5E030AJ
Nch 30V 3A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
75mΩ
±3.0A
1W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
(SC-96)
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCL
HW
Symbol
VDSS
ID*1
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
Tstg
Value
30
±3.0
±6.0
±12
0.69
3.0
1
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150227 - Rev.002
RQ5E030AJ
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*4
Values
Min. Typ. Max.
- - 125
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = 1mA
Gate threshold voltage
temperature coefficient
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
RDS(on)*5 VGS = 4.5V, ID = 3.0A
VGS = 2.5V, ID = 1.5A
Gate input resistance
RG
Forward Transfer
Admittance
|Yfs|*5 VDS = 5V, ID = 3A
Values
Unit
Min. Typ. Max.
30 - - V
- 18 - mV/℃
- - 1 μA
- - ±100 nA
0.5 - 1.5 V
- -18 - mV/℃
- 57 75
mΩ
- 79 103
- 3.3 -
Ω
2.7 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 100μH, VDD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150227 - Rev.002
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