파트넘버.co.kr RQ5E030AJ 데이터시트 PDF


RQ5E030AJ 반도체 회로 부품 판매점

Nch 30V 3A Middle Power MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
RQ5E030AJ 데이터시트, 핀배열, 회로
RQ5E030AJ
  Nch 30V 3A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
75mΩ
±3.0A
1W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
(SC-96)
      
lInner circuit
   Datasheet
      
 
 
 
      
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCL
HW
Symbol
VDSS
ID*1
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
Tstg
Value
30
±3.0
±6.0
±12
0.69
3.0
1
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150227 - Rev.002    


RQ5E030AJ 데이터시트, 핀배열, 회로
RQ5E030AJ
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*4
Values
Min. Typ. Max.
- - 125
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = 1mA
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*5 VGS = 4.5V, ID = 3.0A
VGS = 2.5V, ID = 1.5A
Gate input resistance
RG  
Forward Transfer
Admittance
|Yfs|*5 VDS = 5V, ID = 3A
Values
Unit
Min. Typ. Max.
30 - - V
- 18 - mV/
- - 1 μA
- - ±100 nA
0.5 - 1.5 V
- -18 - mV/
- 57 75
- 79 103
- 3.3 -
Ω
2.7 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 100μH, VDD = 15V, RG = 25Ω, STARTING Tch = 25Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150227 - Rev.002




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RQ5E030AJ mosfet

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RQ5E030AJ

Nch 30V 3A Middle Power MOSFET - ROHM Semiconductor