파트넘버.co.kr BF5030R 데이터시트 PDF


BF5030R 반도체 회로 부품 판매점

Silicon N-Channel MOSFET Tetrode



Infineon 로고
Infineon
BF5030R 데이터시트, 핀배열, 회로
Silicon N-Channel MOSFET Tetrode
Designed for input stages of UHF- and
VHF-tuners with AGC function
Supporting 5 V operations and
power saving 3 V operations
Integrated ESD gate protection diodes
Very low noise figure
High gain, high forward transadmittance
Very good cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BF5030...
3
4
2
1
AGC G2
HF G1
Input
RG1
VGG
Drain
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5030
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF5030R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF5030W
SOT343 1=D 2=S 3=G1 4=G2 -
-
HF Output
+ DC
EHA07461
Marking
KXs
KXs
KXs
1 2009-05-05


BF5030R 데이터시트, 핀배열, 회로
BF5030...
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS 94 °C, BF5030W
TS 76 °C, BF5030, BF5030R
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point1)
BF5030W
BF5030, BF5030R
Symbol
VDS
ID
IG1S, IG2S
VG1S, VG2S
Ptot
Tstg
Tch
Symbol
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
25
±1
±6
200
200
-55 ... 150
150
Value
280
370
Unit
V
mA
mA
V
mW
°C
Unit
K/W
2 2009-05-05




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BF5030R mosfet

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