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Infineon |
Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and
VHF-tuners with AGC function
• Supporting 5 V operations and
power saving 3 V operations
• Integrated ESD gate protection diodes
• Very low noise figure
• High gain, high forward transadmittance
• Very good cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BF5030...
3
4
2
1
AGC G2
HF G1
Input
RG1
VGG
Drain
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5030
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF5030R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF5030W
SOT343 1=D 2=S 3=G1 4=G2 -
-
HF Output
+ DC
EHA07461
Marking
KXs
KXs
KXs
1 2009-05-05
BF5030...
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS ≤ 94 °C, BF5030W
TS ≤ 76 °C, BF5030, BF5030R
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point1)
BF5030W
BF5030, BF5030R
Symbol
VDS
ID
IG1S, IG2S
VG1S, VG2S
Ptot
Tstg
Tch
Symbol
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
25
±1
±6
200
200
-55 ... 150
150
Value
≤ 280
≤ 370
Unit
V
mA
mA
V
mW
°C
Unit
K/W
2 2009-05-05
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