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RF4E075AT 반도체 회로 부품 판매점

Pch -30V -7.5A Middle Power MOSFET Datasheet



ROHM Semiconductor 로고
ROHM Semiconductor
RF4E075AT 데이터시트, 핀배열, 회로
RF4E075AT
  Pch -30V -7.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-30V
21.7mΩ
±7.5A
2W
lFeatures
1) Low on - resistance.
2) High Power small mold Package
(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HUML2020L8
      
lInner circuit
   Datasheet
      
 
 
 
      
lApplication
Switching
Load switch
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JT
Symbol
VDSS
ID
ID,pulse*1
VGSS
EAS*2
IAS*2
PD*3
Tj
Tstg
Value
-30
±7.5
±30
±20
10.6
-2.7
2
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150218 - Rev.001    


RF4E075AT 데이터시트, 핀배열, 회로
RF4E075AT
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
Values
Min. Typ. Max.
- - 62.5
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
IDSS VDS = -30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = -1mA
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = -10V, ID = -7.5A
VGS = -4.5V, ID = -7.5A
Forward Transfer
Admittance
|Yfs|*4 VDS = -5.0V, ID = -7.5A
Values
Unit
Min. Typ. Max.
-30 - - V
- -22 - mV/
- - -1 μA
- - ±100 nA
-1.0 - -2.5 V
- 2.9 - mV/
- 16.7 21.7
- 24.4 31.7
6.5 - - S
*1 Pw 10μs, Duty cycle 1%
*2 Tr1: L 2mH, VDD = -15V, RG = 25Ω, STARTING Tch = 25Fig.3-1,3-2
*3 MOUNTED ON 40mm×40mm Cu BOARD
*4 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150218 - Rev.001




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RF4E075AT mosfet

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Pch -30V -7.5A Middle Power MOSFET Datasheet - ROHM Semiconductor