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STP12N60M2 반도체 회로 부품 판매점

N-channel Power MOSFET



STMicroelectronics 로고
STMicroelectronics
STP12N60M2 데이터시트, 핀배열, 회로
STP12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP12N60M2 600 V 0.450 Ω 9 A 85 W
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STP12N60M2
Table 1: Device summary
Marking
Package
12N60M2
TO-220
Packing
Tube
May 2015
DocID027902 Rev 1
This is information on a product in full production.
1/13
www.st.com


STP12N60M2 데이터시트, 핀배열, 회로
Contents
Contents
STP12N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID027902 Rev 1




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STP12N60M2 mosfet

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N-channel Power MOSFET - STMicroelectronics