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PDF STP150NF04 Data sheet ( Hoja de datos )

Número de pieza STP150NF04
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
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No Preview Available ! STP150NF04 Hoja de datos, Descripción, Manual

STP150NF04
N-channel 40 V, 0.005 Ω typ., 80 A STripFET™II Power MOSFET
in a TO-220 package
Datasheet — production data
Features
Type
STP150NF04
VDSS
40 V
RDS(on)
max
< 0.007 Ω
100% avalanche tested
Standard level gate drive
ID
80 A
Applications
Switching applications
TAB
3
2
1
TO-220
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1. Internal schematic diagram
$ 4!"
'
Table 1. Device summary
Order code
STP150NF04
Marking
P150NF04
3
!-V
Package
TO-220
Packaging
Tube
October 2012
This is information on a product in full production.
Doc ID 14848 Rev 3
1/12
www.st.com
12

1 page




STP150NF04 pdf
STP150NF04
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
ISD = 80 A, VGS = 0
-
-
VSD(2) Forward on voltage
ISD = 80 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 80 A,
di/dt=100 A/µs
VDD = 25 V, Tj = 150 °C
(see Figure 15)
-
80 A
320 A
ns
1.3 nC
A
73 ns
170 nC
4.6 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 14848 Rev 3
5/12

5 Page





STP150NF04 arduino
STP150NF04
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
01-Jul-2008
1 First release
25-Sep-2009
2 Inserted device in TO-220.
04-Oct-2012
Updated title and description on the cover page.
3
Updated mechanical data.
Doc ID 14848 Rev 3
11/12

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