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PJ2301 반도체 회로 부품 판매점

20V P-Channel Enhancement Mode MOSFET



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PJ2301 데이터시트, 핀배열, 회로
PJ2301
20V P-Channel Enhancement Mode MOSFET
FEATURES
R,
DS(ON)
VGS@-1.8V,ID@-1.5A=200mΩ
• RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC converters
• Low gate charge
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : 01
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
S ym b o l
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain Current (Notes 1)
Pulsed Drain Current (Notes 1)
S t e a d y- S ta t e
S t e a d y- S ta t e
t < 5s
TA= 2 5 OC
TA= 7 0 OC
TA= 2 5 OC
Power Dissipation (Notes 2)
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
TA= 2 5 OC
TA= 7 0 OC
V GS
ID
IDM
P
D
R θJA
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
RθJL
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e Ra ng e
T ,T
J STG
Limit
-20
+8
-1.75
-1.4
-2
10
700
450
175
65
-55 to + 150
NOTES:
1. Mounted on minimum pad layout.
2. Mounted on 48cm2 FR-4 PCB board.
.
March 2,2015-REV.02
Uni ts
V
V
A
A
mW
OC /W
OC /W
OC
PAGE . 1


PJ2301 데이터시트, 핀배열, 회로
PJ2301
ELECTRICAL CHARACTERISTICS
S ta ti c
Parameter
S ym b o l
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S (o n)
R D S (o n)
R D S (o n)
ID S S
IGS S
Forward Transconductance
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Tur n-On Ti me
Tur n-Off Ti m e
Tur n-On Ri s e Ti m e
Tur n-Off F a ll Ti m e
Input C apaci tance
Output Capacitance
Re ve rs e Tr a ns fe r C a p a c i ta nc e
Gate Resistance
Source-Drain Diode
g FS
Qg
Qgs
Qgd
ton
t
off
tr
tf
C iss
C oss
C
rss
Rg
Max. D i ode Forward C urrent
Diode Forward Voltage
Body-D i ode Reverse Recovery
Ti me
Body-D i ode Reverse Recovery
C ha rg e
Is
V SD
trr
Q rr
Te s t C o nd i ti o n
V GS=0 V, ID= -2 5 0μA
V DS=V GS, ID= -2 5 0μA
VGS= -4.5V, I D= -2.2A
VGS= -2.5V, I D= -1.7A
VGS= -1.8V, I D= -1.5A
VDS= -16V, VGS=0V
V GS= +8V, V DS=0V
V DS= -1 0 V, ID= -1 .7 A
V = -10V, I = -2.2A
DS D
V = -4.5V
GS
VDD= -16V ,
ID= -2.2A, VGS= -4.5V
RGEN=2.5Ω
VDS= -10V, VGS=0V
f=1.0MHZ
VDS=0V, VGS=0V
f=1.0MHZ
-
IS= -1A , V GS=0V
I=
S
-2.1A,
d i /d t=1 0 0 A /μ s
M i n.
Typ .
M a x.
Units
-20
-0.5
-
-
-
-
-
-
-0.7
90
120
170
-
-
-
-0.9
105
140
200
-1
+100
V
V
mΩ
μA
nA
46 -S
-4-
- 0.5 - nC
- 1-
-8-
- 35 -
ns
- 15 -
- 25 -
- 200 300
- 90 140 p F
- 40 60
- 12 - Ω
- - -2
-
-0.79
-1
- 30 -
- 12 -
A
V
ns
nC
March 2,2015-REV.02
PAGE . 2




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