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PDF NX3020NAK Data sheet ( Hoja de datos )
| Número de pieza | NX3020NAK | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX3020NAK
30 V, single N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 200 mA
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
NX3020NAK
30 V, single N-channel Trench MOSFET
103 017aaa661
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102
0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa662
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102 0.33
0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 A; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
NX3020NAK
All information provided in this document is subject to legal disclaimers.
Product data sheet
29 October 2013
Min Typ Max Unit
30 - - V
0.8 1.2 1.5 V
- - 1 µA
- - 10 µA
© NXP N.V. 2013. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
3.3
2.9
1.9
NX3020NAK
30 V, single N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet NX3020NAK.PDF ] | |
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