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Automotive N-Channel MOSFET



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Vishay
SQ4184EY 데이터시트, 핀배열, 회로
www.vishay.com
SQ4184EY
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
40
0.0046
0.0056
29
Single
SO-8
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Single
D
D5
D6
D7
8
D
G
4
3G
2S
1S
S
Top View
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
29
16.9
6.4
84
50
125
7.1
2.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mount b
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJF
LIMIT
80
21
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2285-Rev. C, 28-Sep-15
1
Document Number: 67375
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ4184EY 데이터시트, 핀배열, 회로
www.vishay.com
SQ4184EY
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 14 A
VGS = 10 V
ID = 14 A, TJ = 125 °C
VGS = 10 V
ID = 14 A, TJ = 175 °C
VGS = 4.5 V
ID = 12 A
VDS = 15 V, ID = 14 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
VGS = 0 V
VDS = 20 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 5 A
f = 1 MHz
VDD = 20 V, RL = 4 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
IF = 6 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
40 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
- - 50 μA
- - 250
30 -
-A
- 0.0036 0.0046
- - 0.0070
Ω
- - 0.0083
- 0.0046 0.0056
- 78 - S
- 4319 5400
- 512 640 pF
- 240 300
- 72 110
- 13 - nC
- 11 -
0.8 1.6 3.9 Ω
- 15 25
- 30 45
ns
- 43 66
- 15 25
- - 84 A
- 0.75 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2285-Rev. C, 28-Sep-15
2
Document Number: 67375
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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