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SQ3418EV 반도체 회로 부품 판매점

Automotive N-Channel MOSFET



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Vishay
SQ3418EV 데이터시트, 핀배열, 회로
www.vishay.com
SQ3418EV
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
TSOP-6 Single
S
4
D
5
D
6
40
0.032
0.042
8
Single
TSOP-6
(1, 2, 5, 6) D
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(3) G
1
D
Top View
Marking Code: 8P
2
D
3
G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
TC = 25 °C a
TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
8
5
6
32
13.5
9.1
5
1.6
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S15-1989-Rev. A, 24-Aug-15
1
Document Number: 63412
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ3418EV 데이터시트, 핀배열, 회로
www.vishay.com
SQ3418EV
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 5 A
VGS = 10 V
ID = 5 A, TJ = 125 °C
VGS = 10 V
ID = 5 A, TJ = 175 °C
VGS = 4.5 V
ID = 4 A
VDS = 15 V, ID = 4 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
VGS = 10 V
VDS = 20 V, ID = 4 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 20 V, RL = 4 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current a
ISM
Forward Voltage
VSD IF = 3 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
40
1.5
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
1.0
-
-
-
-
-
-
TYP. MAX. UNIT
-
2.0
-
-
-
-
-
0.026
-
-
0.032
21
-
2.5
± 100
1
50
150
-
0.032
0.050
0.061
0.042
-
V
nA
μA
A
Ω
S
452 678
81 121 pF
36 53
8.5 12.7
1.1 - nC
2.0 -
2.0 3.0 Ω
68
28 37
ns
12 16
37 50
- 32
0.8 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1989-Rev. A, 24-Aug-15
2
Document Number: 63412
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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