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Automotive P-Channel MOSFET



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Vishay
SQ2389ES 데이터시트, 핀배열, 회로
www.vishay.com
SQ2389ES
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A)
Configuration
-40
0.094
0.188
-4.1
Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SOT-23 (TO-236)
D
3
S
G
1
G
Top View
Marking Code: 9Axxx
2
S
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2389ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
PD
TJ, Tstg
LIMIT
-40
± 20
-4.1
-2.4
-3.6
-16
-12
7.2
3
1
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mount b
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
°C/W
S15-0166-Rev. A, 02-Feb-15
1
Document Number: 63248
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ2389ES 데이터시트, 핀배열, 회로
www.vishay.com
SQ2389ES
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -40 V
VGS = 0 V VDS = -40 V, TJ = 125 °C
VGS = 0 V VDS = -40 V, TJ = 175 °C
VGS = -10 V
VDS -5 V
VGS = -10 V
ID = -3 A
VGS = -10 V
ID = -3 A, TJ = 125 °C
VGS = -10 V
ID = -3 A, TJ = 175 °C
VGS = -4.5 V
ID = -3 A
VDS = -10 V, ID = -3 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = -20 V, f = 1 MHz
VGS = -10 V
VDS = -20 V, ID = -3 A
f = 1 MHz
VDD = -20 V, RL = 6.7 Ω
ID -3 A, VGEN = -10 V, Rg = 1 Ω
Pulsed Current a
Forward Voltage
ISM
VSD IF = -1.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
-40
-1.5
-
-
-
-
-10
-
-
-
-
-
-
-
-
-
-
-
3.1
-
-
-
-
-
-
TYP. MAX. UNIT
-
-2.0
-
-
-
-
-
0.084
-
-
0.140
5
-
-2.5
± 100
-1
-50
-150
-
0.094
0.144
0.169
0.188
-
V
nA
μA
A
Ω
S
360 420
80 100 pF
42 54
8.2 12
1.1 - nC
3-
4.1 7 Ω
7 10
12 16
ns
16 20
48
- -10
-0.8 -1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0166-Rev. A, 02-Feb-15
2
Document Number: 63248
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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Automotive P-Channel MOSFET - Vishay