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PDF SQ2337ES Data sheet ( Hoja de datos )
| Número de pieza | SQ2337ES | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ2337ES
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 6 V
ID (A)
TO-236
(SOT-23)
- 80
0.290
0.314
- 2.2
S
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G1
S2
3D
G
Top View
SQ2337ES
Marking Code: 8Qxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
SOT-23
SQ2337ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 80
± 20
- 2.2
- 1.3
- 3.7
-9
- 11
6
3
1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
°C/W
S13-1184-Rev. B, 20-May-13
1
Document Number: 66717
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQ2337ES
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 50 °C/W
3. TJM - TTf = PDMZthFf (t)
4. Surface Mounted
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66717.
S13-1184-Rev. B, 20-May-13
5
Document Number: 66717
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQ2337ES.PDF ] | |
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