파트넘버.co.kr SQ1912AEEH 데이터시트 PDF


SQ1912AEEH 반도체 회로 부품 판매점

Automotive Dual N-Channel MOSFET



Vishay 로고
Vishay
SQ1912AEEH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1912AEEH
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 4.5 V
RDS(on) (Ω) at VGS = 2.5 V
RDS(on) (Ω) at VGS = 1.8 V
ID (A)
Configuration
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
20
0.280
0.360
0.450
0.8
Dual
Marking Code: 8R
1
S1
Top View
2
G1
3
D2
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg tested
• Typical ESD protection: 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
3k
G1
3k
G2
S1 S2
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1912AEEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
20
± 12
0.8
0.8
0.8
3
1.5
0.5
-55 to +175
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
220
100
UNIT
°C/W
S15-1251 Rev. A, 01-Jun-15
1
Document Number: 62983
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ1912AEEH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1912AEEH
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 12 V
VGS = 0 V
VDS = 20 V
VGS = 0 V
VDS = 20 V, TJ = 125 °C
VGS = 0 V
VDS = 20 V, TJ = 175 °C
VGS = 4.5 V
VDS 5 V
VGS = 4.5 V
ID = 1.2 A
VGS = 4.5 V ID = 1.2 A, TJ = 125 °C
VGS = 4.5 V
ID = 1.2 A, TJ = 175°C
VGS = 2.5 V
ID = 1 A
VGS = 1.8 V
ID = 0.2 A
VDS = 10 V, ID = 1.2 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance d
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 10 V, f = 1 MHz
VGS = 4.5 V
VDS = 10 V, ID = 1.2 A
f = 1 MHz
VDD = 10 V, RL = 20 Ω
ID 0.5 A, VGEN = 4.5 V, Rg = 1 Ω
Pulsed Current a
Forward Voltage
ISM
VSD IF = 0.5 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
d. Gate is obscured by ESD network series resistance and cannot be tested directly.
MIN.
20
0.45
-
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.6
-
-
-
-
-
-
0.200
-
-
0.261
0.320
2.6
-
1.5
±1
± 10
1
50
150
-
0.280
0.423
0.510
0.360
0.450
-
V
μA
mA
μA
A
Ω
S
27 -
19 -
7-
1 1.25
0.14 -
0.27 -
3 4.5
66 82
108 135
715 893
390 487
pF
nC
kΩ
ns
-3
0.8 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1251 Rev. A, 01-Jun-15
2
Document Number: 62983
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




PDF 파일 내의 페이지 : 총 13 페이지

제조업체: Vishay

( vishay )

SQ1912AEEH mosfet

데이터시트 다운로드
:

[ SQ1912AEEH.PDF ]

[ SQ1912AEEH 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


SQ1912AEEH

Automotive Dual N-Channel MOSFET - Vishay