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SQ1563AEH 반도체 회로 부품 판매점

P- & N-Channel MOSFET



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Vishay
SQ1563AEH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1563AEH
Vishay Siliconix
N-and P-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) (Ω) at VGS = ± 4.5 V
RDS(on) (Ω) at VGS = ± 2.5 V
RDS(on) (Ω) at VGS = ± 1.8 V
ID (A)
Configuration
20 -20
0.280
0.490
0.360
0.750
0.450
1.100
0.85 -0.85
N & P Pair
Package
SC-70
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• AEC-Q101 qualified c
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 S2
G2
G1
Marking Code: 9Q
1
S1
Top View
2
G1
3
D2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
20 -20
±8
0.85 -0.85
0.85 -0.79
0.85 -0.85
3.3 -3.3
3.5 -1.4
0.6 0.1
1.5 1.5
0.5 0.5
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB mount b
SYMBOL
RthJA
RthJF
N-CHANNEL
220
100
P-CHANNEL
220
100
UNIT
°C/W
S15-2107-Rev. A, 07-Sep-15
1
Document Number: 62986
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ1563AEH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1563AEH
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge c
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
VGS = 0 V
VDS = 20 V
VGS = 0 V
VDS = -20 V
VGS = 0 V VDS = 20 V, TJ = 125 °C
VGS = 0 V VDS = -20 V, TJ = 125 °C
VGS = 0 V VDS = 20 V, TJ = 175 °C
VGS = 0 V VDS = -20 V, TJ = 175 °C
VGS = 4.5 V
VDS = 5 V
VGS = -4.5 V
VDS = -5 V
VGS = 4.5 V
ID = 0.85 A
VGS = -4.5 V
ID = -0.85 A
VGS = 2.5 V
ID = 0.85 A
VGS = -2.5 V
ID = -0.85 A
VGS = 1.8 V
ID = 0.85 A
VGS = -1.8 V
ID = -0.85 A
VDS = 10 V, ID = 0.85 A
VDS = -10 V, ID = -0.85 A
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 4.5V
VGS = -4.5 V
VGS = 4.5 V
VGS = -4.5 V
VGS = 4.5 V
VGS = -4.5 V
VDS = 10 V, f = 1 MHz
VDS = -10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = -10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = -10 V, f = 1 MHz
f = 1 MHz
f = 1 MHz
VDS = 10 V, ID = 0.85 A
VDS = -10 V, ID = -0.85 A
VDS = 10 V, ID = 0.85 A
VDS = -10 V, ID = -0.85 A
VDS = 10 V, ID = 0.85 A
VDS = -10 V, ID = -0.85 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
20
-20
0.45
-0.45
-
-
-
-
-
-
-
-
2
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
0.6
-0.6
-
-
-
-
-
-
-
-
-
-
0.150
0.400
0.180
0.595
0.210
0.800
2.6
1.5
-
-
1.5
-1.5
± 100
± 100
1
-1
50
-50
150
-150
-
-
0.280
0.490
0.360
0.750
0.450
1.100
-
-
V
nA
μA
A
Ω
S
67 89
63 84
22 29
26 34
10 13
10 13
3.8 11.6
3.1 9.5
0.93 1.25
1.0 1.33
0.16 -
0.15 -
0.38 -
0.44 -
pF
Ω
nC
S15-2107-Rev. A, 07-Sep-15
2
Document Number: 62986
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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SQ1563AEH mosfet

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P- & N-Channel MOSFET - Vishay