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SQ1539EH 반도체 회로 부품 판매점

P- & N-Channel MOSFET



Vishay 로고
Vishay
SQ1539EH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1539EH
Vishay Siliconix
N-and P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) (Ω) at VGS = ± 10 V
RDS(on) (Ω) at VGS = ± 4.5 V
ID (A)
30
0.280
0.380
0.85
-30
0.940
1.800
-0.85
Configuration
N & P Pair
Package
SC-70
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 S2
G2
G1
Marking Code: 9R
1
S1
Top View
2
G1
3
D2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current c
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
30 -30
± 20
0.85 -0.85
0.85 -0.56
0.85 -0.85
3.3 -3.3
3.5 -1.9
0.6 0.2
1.5 1.5
0.5 0.5
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
PCB Mount b
SYMBOL
RthJA
RthJF
N-CHANNEL
220
100
P-CHANNEL
220
100
UNIT
°C/W
S15-1925-Rev. A, 17-Aug-15
1
Document Number: 62993
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SQ1539EH 데이터시트, 핀배열, 회로
www.vishay.com
SQ1539EH
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge c
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V
VDS = 30 V
VGS = 0 V
VDS = -30 V
VGS = 0 V VDS = 30 V, TJ = 125 °C
VGS = 0 V VDS = -30 V, TJ = 125 °C
VGS = 0 V VDS = 30 V, TJ = 175 °C
VGS = 0 V VDS = -30 V, TJ = 175 °C
VGS = 10 V
VDS = 5 V
VGS = -10 V
VDS = -5 V
VGS = 10 V
ID = 1 A
VGS = -10 V
ID = -0.5 A
VGS = 4.5 V
ID = 0.1 A
VGS = -4.5 V
ID = -0.1 A
VDS = 15 V, ID = 0.7 A
VDS = -15 V, ID = -0.5 A
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 4.5 V
VGS = -4.5 V
VGS = 4.5 V
VGS = -4.5 V
VGS = 4.5 V
VGS = -4.5 V
VDS = 15 V, f = 1 MHz
VDS = -15 V, f = 1 MHz
VDS = 15 V, f = 1 MHz
VDS = -15 V, f = 1 MHz
VDS = 15 V, f = 1 MHz
VDS = -15 V, f = 1 MHz
VDS = 15 V, ID = 0.7 A
VDS = -15 V, ID = -0.5 A
VDS = 15 V, ID = 0.7 A
VDS = -15 V, ID = -0.5 A
VDS = 15 V, ID = 0.7 A
VDS = -15 V, ID = -0.5 A
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 15 V, RL = 20 Ω
ID 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = -15 V, RL = 20 Ω
ID -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 20 Ω
ID 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = -15 V, RL = 20 Ω
ID -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 20 Ω
ID 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = -15 V, RL = 20 Ω
ID -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 20 Ω
ID 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = -15 V, RL = 20 Ω
ID -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
30
-30
1
-1
-
-
-
-
-
-
-
-
2
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.8
3.7
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
1.8
-1.8
-
-
-
-
-
-
-
-
-
-
0.210
0.788
0.290
1.400
1.2
0.6
-
-
2.6
-2.6
± 100
± 100
1
-1
50
-50
150
-150
-
-
0.280
0.940
0.380
1.800
-
-
V
nA
μA
A
Ω
S
38 48
40 50
14 21
pF
14 21
6 10
59
1 1.4
1.2 1.6
0.2 - nC
0.3 -
0.4 -
0.6 -
- 17.3
Ω
- 11.1
36
48
18 28
39 50
ns
8 14
10 16
32 46
17 25
S15-1925-Rev. A, 17-Aug-15
2
Document Number: 62993
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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SQ1539EH mosfet

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SQ1539EH

P- & N-Channel MOSFET - Vishay