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PDF 8N50 Data sheet ( Hoja de datos )
| Número de pieza | 8N50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
8N50
8A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 8N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 0.85Ω @ VGS=10V, ID=4.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1
1
1
Power MOSFET
TO-220
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N50L-TA3-T
8N50G-TA3-T
8N50L-TF1-T
8N50G-TF1-T
8N50L-TF2-T
8N50G-TF2-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-546.D
1 page  
8N50
TEST CIRCUITS AND WAVEFORMS(Cont.)
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
Power MOSFET
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
ISD
(DUT)
VDS
(DUT)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-546.D
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 8N50.PDF ] | |
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