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UT2035Z 반도체 회로 부품 판매점

P-CHANNEL POWER MOSFET



Unisonic Technologies 로고
Unisonic Technologies
UT2035Z 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
UT2035Z
-3.6A, -20V P-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
The UTC UT2035Z is a P-channel enhancement mode MOSFET,
it uses UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
charge, etc.
FEATURES
*RDS(ON)<42m@VGS=-4.5V, ID=-4.0A
RDS(ON)<65m@VGS=-2.5V, ID=-4.0A
RDS(ON)<82m@VGS=-1.8V, ID=-2.0A
* High switching speed
* Low gate charge
* Low gate threshold voltage
* Low input capacitance
* Low input/output leakage
SYMBOL
Power MOSFET
3
1
2
SOT-23
(EIAJ SC-59)
OR DERING INFORMATION
Ordering Number
UT2035ZG-AE3-R
Note: Pin Assignment: S: Source G: Gate
Package
SOT-23
D: Drain
Pin Assignment
123
SGD
UT2035ZG-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-937.C


UT2035Z 데이터시트, 핀배열, 회로
UT2035Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-20 V
±8 V
Drain Current
Continuous
(Note
2)
Steady, TA=25°C
State, TA=70°C
ID
-3.6 A
-2.9 A
Pulsed (Note 3)
Power Dissipation (Note 2)
IDM -24 A
PD 0.81 W
Junction Temperature
Storage Temperature Range
TJ
TSTG
-55~+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t10s.
3. Repetitive rating, pulse width limited by junction temperature.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
153.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source
Forward
Leakage Current Reverse
BVDSS
IDSS
IGSS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transfer Admittance
Diode Forward Voltage
VGS(TH)
RDS(ON)
|YFS|
VSD
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-4.0A
VGS=-1.8V, ID=-2.0A
VDS=-5V, ID=-4A
VGS=0V, IS=-1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-10V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS VGS=-4.5V, VDS=-10V, ID=-4A
Gate to Drain Charge
QGD
Gate Resistance
RG VDS=0V, VGS=0V, f=1MHz
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=-10V, VGS=-4.5V,ID=-1A,
RG=6.0, RL=10
Fall-Time
tF
Note: Short duration pulse test used to minimize self-heating effect.
MIN TYP MAX UNIT
-20 V
-1.0 µA
+10 µA
-10 µA
-0.4 -0.7 -1.0 V
30 42 m
50 65 m
61 82 m
14 S
-0.7 -1.0 V
1610
157
145
pF
pF
pF
15.4 nC
2.5 nC
3.3 nC
9.45
16.8 ns
12.4 ns
94.1 ns
42.4 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-937.C




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UT2035Z mosfet

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P-CHANNEL POWER MOSFET - Unisonic Technologies