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IRL1004PBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRL1004PBF 데이터시트, 핀배열, 회로
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RqJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 95403
IRL1004PbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.0065
ID = 130A…
S
TO-220AB
Max.
130…
92…
520
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
1
6/17/04


IRL1004PBF 데이터시트, 핀배열, 회로
IRL1004PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.0065
––– ––– 0.009
VGS = 10V, ID = 78A „
VGS = 4.5V, ID = 65A „
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
63 ––– ––– S VDS = 25V, ID = 78A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
Qg Total Gate Charge
––– ––– 100
ID = 78A
Qgs Gate-to-Source Charge
––– ––– 32 nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43
VGS = 4.5V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 16 –––
VDD = 20V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 210 –––
––– 25 –––
ns
ID = 78A
RG = 2.5, VGS = 4.5V
tf Fall Time
––– 14 –––
RD = 0.18, See Fig. 10 „
LD Internal Drain Inductance
LS Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
G
and center of die contact
Ciss Input Capacitance
––– 5330 –––
VGS = 0V
Coss Output Capacitance
––– 1480 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 320 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 130…
A
––– ––– 520
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 78 120
––– 180 270
V TJ = 25°C, IS = 78A, VGS = 0V „
ns TJ = 25°C, IF = 78A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L =0.23mH
RG = 25, IAS = 78A. (See Figure 12)
ƒ ISD 78A, di/dt 370A/µs, VDD V(BR)DSS,
TJ 175°C
2
„ Pulse width 300µs; duty cycle 2%
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip #93-4
www.irf.com




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IRL1004PBF mosfet

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Power MOSFET ( Transistor ) - International Rectifier