P20F50HP2 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 SHINDENGEN |
PowerMOSFET
P20F50HP2
OUTLINE
Package FTO-220AG 3pin
500V20A
Unit mm
di/dt
Feature
HighVoltage
LowRON
FastSwitching
HighAvalanchedurability,Highdi/dtdurability
0000
20F50H2
Web
Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
RATINGS
AbsoluteMaximum Ratings
Tc 25 /unlessotherwisespecified
Item
StorageTemperature
ChannelTemperature
Drain-SourceVoltage
GateSourceVoltage
ContinuousDrainCurrent(DC)
ContinuousDrainCurrent(Peak)
ContinuousSourceCurrent(DC)
TotalPowerDissipation
RepetitiveAvalancheCurrent
SingleAvalancheEnergy
RepetitiveAvalancheEnergy
Drain-SourceDiodedi/dt
DielectricStrength
MountingTorque
Symbol
Conditions
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
PT
IAR
EAS
EAR
di/dt
Vdis
TOR
10 s,duty=1/100
Pulsewidth10µs,duty=1/100
StartingTch=25 ,Tch
StartingTch=25 ,Tch
StartingTch=25 ,Tch
Is 20A,Tc 25
AC1
Terminalstocase,AC1minute
0.3N m
(Recommendedtorque:0.3N m)
150
150
150
Ratings
55 150
150
500
30
20
80
20
95
20
90
9
350
2
0.5
Unit
V
A
W
A
mJ
A/ s
kV
Nm
ElectricalCharacteristics
Tc 25 /unlessotherwisespecified
Item
Symbol
Conditions
Ratings
MIN TYP MAX Unit
Drain-SourceBreakdownVoltage
VBR DSS ID 1mA,VGS 0V
ZeroGateVoltageDrainCurrent
IDSS VDS 500V,VGS 0V
Gate-SourceLeakageCurrent
IGSS VGS 30V,VDS 0V
ForwardTransconductance
gfs ID 10A,VDS 10V
RStaticDrain-SourceOn-stateResistance DSON ID 10A,VGS 10V
GateThresholdVoltage
VTH ID 1mA,VDS 10V
Source-DrainDiodeForwardVoltage
VSD
IS 10A,VGS 0V
ThermalResistance
jc Junctiontocase
TotalGateCharge
Qg VDD 400V,VGS 10V,ID 20A
InputCapacitance
Ciss
ReverseTransferCapacitance
Crss VDS 50V,VGS 0V,f 1MHz
OutputCapacitance
Coss
Turn-ondelaytime
td on
Risetime
tr ID 10A,RL 15 ,VDD 150V,Rg=50 ,
Turn-offdelaytime
tdoff VGS 10V,VGS 0V
Falltime
tf
500
10
3.0
20.5
0.29
3.75
40
1735
10
176
35
63
140
50
100
0.1
0.36
4.5
1.5
1.32
V
A
S
V
/W
nC
pF
ns
MOSFET 2012.06
www.shindengen.co.jp/product/semi/
CHARACTERISTIC DIAGRAMS
Typical Output Characteristics
Transfer Characteristics
P20F50HP2
Static Drain-Source On-state Resistance vs Drain Current
Static Drain-Source On-state Resistance vs Case Temperature Gate Threshold Voltage vs Case emperature Safe Operating Area
Transient Thermal Impedance
Capacitance Characteristics
Power Derating - Case Temperature
Gate Charge Characteristics
Single Avalanche Energy Derating vs Channel Temperature Single Avalanche Current vs Inductive Load
www.shindengen.co.jp/product/semi/
Sinewave 50Hz
50Hzsinewaveisusedformeasurements.
MOSFET 2012.06
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: SHINDENGEN
( shindengen )
P20F50HP2 mosfet
데이터시트 다운로드 :
[ P20F50HP2.PDF ]
[ P20F50HP2 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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