FDD1600N10ALZ 반도체 회로 부품 판매점
N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
FDD1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 6.8 A, 160 m
January 2014
Features
• RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A
• Low Gate Charge (Typ.2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD1600N10ALZ
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
-55 to +150
300
FDD1600N10ALZ
8.4
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD1600N10ALZ Rev. C3
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
FDD1600N10ALZ
Top Mark
1600N10ALZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 A, VGS = 0 V
ID = 250 A, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10 V, ID = 3.4 A
VGS = 5 V, ID = 2.1 A
VDS = 10 V, ID = 6.8 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Total Gate Charge Sync.
Output Charge
Equivalent Series Resistance (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VGS = 10 V
VGS = 5 V
VDD = 50 V,
ID = 6.8 A
VDS = 0 V, ID = 3.4 A
VDS = 50 V, VGS = 0 V
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
124
175
19.6
169
43
2.04
85
2.78
1.5
0.72
0.56
4.02
2.5
5.2
2.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 6.8 A,
VGS = 10 V, RG = 4.7
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 6.8 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 6.8 A, VDS = 50 V,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS =3.18 A, RG = 25 , starting TJ = 25C.
3. ISD 6.8 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
7
2
13
2
-
-
-
37
42
Quantity
2500 units
Max. Unit
-V
- V/oC
1
500
A
±10 A
2.8 V
160
375
m
-S
225 pF
55 pF
- pF
- pF
3.61 nC
1.95 nC
- nC
- nC
-V
- nC
- nC
-
24 ns
14 ns
36 ns
14 ns
6.8 A
13.6 A
1.3 V
- ns
- nC
©2012 Fairchild Semiconductor Corporation
FDD1600N10ALZ Rev. C3
2
www.fairchildsemi.com
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FDD1600N10ALZ mosfet
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관련 데이터시트
FDD1600N10ALZ
N-Channel PowerTrench MOSFET - Fairchild Semiconductor
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N-Channel PowerTrench MOSFET + Diode - Fairchild Semiconductor