|
|
PDF MTB1K0P25J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB1K0P25J3 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB1K0P25J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C091J3
Issued Date : 2015.10.07
Revised Date : 2015.10.13
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB1K0P25J3 BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-3A
RDS(ON)@VGS=-4.5V, ID=-3A
-250V
-3.2A
1.0Ω(typ)
1.1Ω(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB1K0P25J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB1K0P25J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0P25J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C091J3
Issued Date : 2015.10.07
Revised Date : 2015.10.13
Page No. : 5/9
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
1000
f=1MHz
Ciss
100
C oss
10
0
100
Crss
10 20
-VDS, Drain-Source Voltage(V)
Maximum Safe Operating Area
30
10
RDS(ON)
Limited
1
0.1
0.01
0.1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
single pulse
1 10 100
-VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
1000
Maximum Drain Current vs Case Temperature
4
3.5
3
2.5
2
1.5
1
VGS=-10V, Tj(max)=150°C,
0.5 RθJC=4°C/W, single pulse
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-125V
8
6 VDS=-50V
4 VDS=-200V
2
ID=-3A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
Typical Transfer Characteristics
10
VDS=-10V
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
-VGS, Gate-Source Voltage(V)
MTB1K0P25J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB1K0P25J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB1K0P25J3 | P-Channel Enhancement Mode MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |