파트넘버.co.kr FW217A 데이터시트 PDF


FW217A 반도체 회로 부품 판매점

N-Channel Power MOSFET / Transistor



ON Semiconductor 로고
ON Semiconductor
FW217A 데이터시트, 핀배열, 회로
Ordering number : EN8994B
FW217A
N-Channel Power MOSFET
35V, 6A, 39mΩ, Dual SOIC8
http://onsemi.com
Features
On-state resistance RDS(on)1=30mΩ (typ.)
4.5V drive
Halogen free compliance
Protection Diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10s)
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW10s
Ratings
35
±20
6
6.5
24
1.8
2.2
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW217A-TL-2W
0.22 Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
Electrical Connection
8765
FW217
A LOT No.
Semiconductor Components Industries, LLC, 2013
July, 2013
1234
61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7


FW217A 데이터시트, 핀배열, 회로
FW217A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
VDS=20V, f=1MHz
See specied Test Circuit.
VDS=20V, VGS=10V, ID=6A
IS=6A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=6A
RL=3Ω
D VOUT
FW217A
P.G 50Ω S
min
35
Ratings
typ
1.7
3
30
50
470
70
35
8
34
31
30
10
2
2
0.84
max
1
±10
2.6
39
70
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
FW217A-TL-2W
Package
SOIC8
Shipping
2,500pcs./reel
memo
Pb Free and Halogen Free
No.8994-2/7




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FW217A mosfet

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FW217A

N-Channel Power MOSFET / Transistor - ON Semiconductor