파트넘버.co.kr NTB30N06 데이터시트 PDF


NTB30N06 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ON Semiconductor 로고
ON Semiconductor
NTB30N06 데이터시트, 핀배열, 회로
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 M)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
60
60
VGS
VGS
"20
"30
ID 27
ID 15
IDM 80
PD 88.2
0.59
Operating and Storage Temperature Range
TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 26 A, VDS = 60 Vdc)
EAS
101
Thermal Resistance
– Junction–to–Case
RθJC 1.7
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
30 AMPERES
60 VOLTS
RDS(on) = 42 m
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx30N06
LLYWW
1
Gate
3
Source
NTx30N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx30N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N06
NTB30N06
NTB30N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
NTP30N06/D


NTB30N06 데이터시트, 핀배열, 회로
NTP30N06, NTB30N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
71.1
70
Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Note 1.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
µAdc
– – 1.0
– – 10
±100
nAdc
Vdc
2.0 3.05 4.0
– 7.3 – mV/°C
Static Drain–to–Source On–Resistance (Note 1.)
(VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
Static Drain–to–Source On–Voltage (Note 1.)
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 15 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
Rise Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 ) (Note 1.)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc) (Note 1.)
QT
Q1
Q2
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc) (Note 1.)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 1.)
trr
ta
tb
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.
QRR
m
– 35 42
Vdc
– 1.1 1.5
– 0.98 –
– 16 – mhos
850 1200
pF
– 250 350
– 68 100
– 11 25 ns
– 36 80
– 24 50
– 31 60
– 23.4 46 nC
– 5.1 –
– 11 –
– 1.03 1.15 Vdc
– 1.05 –
– 52 – ns
– 38 –
– 15 –
– 0.094 –
µC
http://onsemi.com
2




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