파트넘버.co.kr MTP3055VL 데이터시트 PDF


MTP3055VL 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ON Semiconductor 로고
ON Semiconductor
MTP3055VL 데이터시트, 핀배열, 회로
MTP3055VL
Preferred Device
Power MOSFET
12 Amps, 60 Volts, Logic
Level
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage
Continuous
Single Pulse (tp 50 μs)
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
±15
± 20
12
8.0
42
48
0.32
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG =25 Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
EAS
RθJC
RθJA
TL
72
3.13
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
12 AMPERES
60 VOLTS
RDS(on) = 180 mΩ
NChannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
12
3
TO220AB
CASE 221A
STYLE 5
MTP3055VL
LLYWW
1
Gate
3
Source
MTP3055VL
LL
Y
WW
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP3055VL
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTP3055VL/D


MTP3055VL 데이터시트, 핀배열, 회로
MTP3055VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
DrainSource OnVoltage (VGS = 5.0 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60
62
Vdc
mV/°C
μAdc
− − 10
− − 100
− − 100 nAdc
1.0 1.6 2.0 Vdc
3.0 mV/°C
0.12 0.18 Ohm
Vdc
1.6 2.6
− − 2.5
5.0 8.8
mhos
410 570
pF
114 160
21 40
9.0 20 ns
85 190
14 30
43 90
8.1 10 nC
1.8
4.2
3.8
Vdc
0.97 1.3
0.86
55.7
ns
37
18.7
0.116
μC
nH
3.5
4.5
7.5 nH
http://onsemi.com
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MTP3055VL mosfet

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