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ON Semiconductor |
MTP3055VL
Preferred Device
Power MOSFET
12 Amps, 60 Volts, Logic
Level
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Single Pulse (tp ≤ 50 μs)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
±15
± 20
12
8.0
42
48
0.32
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG =25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
EAS
RθJC
RθJA
TL
72
3.13
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
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12 AMPERES
60 VOLTS
RDS(on) = 180 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
12
3
TO−220AB
CASE 221A
STYLE 5
MTP3055VL
LLYWW
1
Gate
3
Source
MTP3055VL
LL
Y
WW
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP3055VL
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MTP3055VL/D
MTP3055VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
Drain−Source On−Voltage (VGS = 5.0 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60 −
− 62
− Vdc
− mV/°C
μAdc
− − 10
− − 100
− − 100 nAdc
1.0 1.6 2.0 Vdc
− 3.0 − mV/°C
− 0.12 0.18 Ohm
Vdc
− 1.6 2.6
− − 2.5
5.0 8.8
− mhos
−
410 570
pF
− 114 160
− 21 40
− 9.0 20 ns
− 85 190
− 14 30
− 43 90
− 8.1 10 nC
− 1.8 −
− 4.2 −
− 3.8 −
Vdc
− 0.97 1.3
− 0.86 −
− 55.7 −
ns
− 37 −
− 18.7 −
− 0.116 −
μC
nH
− 3.5 −
4.5
− 7.5 − nH
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