파트넘버.co.kr WFW24N60 데이터시트 PDF


WFW24N60 반도체 회로 부품 판매점

N-Channel MOSFET



Wisdom technologies 로고
Wisdom technologies
WFW24N60 데이터시트, 핀배열, 회로
Wisdom Semiconductor
WFW24N60
N-Channel MOSFET
Features
RDS(on) (Typical 0.22 )@VGS=10V
Gate Charge (Typical 90nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Symbol
1. Gate{
TO-247
{ 2. Drain
◀▲
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
24.0
14.5
96.0
±30
1885
38.8
4.5
388
3.10
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.32
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.


WFW24N60 데이터시트, 핀배열, 회로
WFW24N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 12.0A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =24.0A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =24.0A
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
0.22 0.27
V
3500
450
46
-
-
-
80 -
250 -
180 -
155 -
90 -
20 -
40 -
pF
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =24.0A, VGS =0V
IS=24.0A,VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 6.0mH, IAS =24.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 24.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
450
5.5
Max.
24.0
96.0
1.4
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Wisdom technologies

( wisdom )

WFW24N60 mosfet

데이터시트 다운로드
:

[ WFW24N60.PDF ]

[ WFW24N60 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


WFW24N60

N-Channel MOSFET - Wisdom technologies