|
Wisdom technologies |
PRELIMILARY
Wisdom Semiconductor
WFN1N70
N-Channel MOSFET
Features
■ RDS(on) (Max 14.0 Ω )@VGS=10V
■ Gate Charge (Typical 5.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-92
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Read
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
700
0.3
0.18
1.2
±30
54
0.25
5.5
2.5
0.02
- 55 ~ 150
300
Value
Typ.
-
-
Max.
50
140
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFN1N70
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 700V, VGS = 0V
VDS = 560V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 0.15A
VGS =0 V, VDS =25V, f = 1MHz
VDD =350V, ID =0.8A, RG =25Ω
(Note 4, 5)
VDS =560V, VGS =10V, ID =0.8A
(Note 4, 5)
Min
700
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.65
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
11.5 14.0
V
Ω
160 200
20 26
3.0 4.0
pF
15 40
25 60
20 50
30 70
5.0 6.0
1.0 -
2.0 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =0.3A, VGS =0V
IS=0.8A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 100mH, IAS =0.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 0.8A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
200
0.6
Max.
0.3
1.2
1.5
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
|