UT75N03 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UT75N03
75A, 30V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UT75N03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) < 7mΩ @ VGS=10V, ID=30A
* RDS(ON) <10mΩ @ VGS=4.5V, ID=20A
SYMBOL
2.Drain
1
1
1
TO-220
TO-251
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT75N03L-TA3-T
UT75N03G-TA3-T
UT75N03L-TM3-T
UT75N03G-TM3-T
UT75N03L-TN3-R
UT75N03G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-327.E
UT75N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
VGSS
±20 V
Continuous Drain Current
ID 75 A
Pulsed Drain Current (Note 2)
IDM 225 A
Single Pulsed Avalanche Current (Note 3)
IAS
100 A
Single Pulsed Avalanche Energy (Note 3)
EAS
228 mJ
Power Dissipation (TC = 25°С)
TO-220
TO-251/ TO-252
PD
75
89
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=20μH, IAS=100A, VDD=24V, RG=25Ω, Starting TJ=25°С
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220
TO-251/ TO-252
Junction to Case
TO-220
TO-251/ TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.0
1.4
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Static Drain-Source On-Resistance
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=30V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VGS=4.5V, ID=20A
30 V
1 µA
100 nA
-100 nA
1 3V
5 7 mΩ
7 10 mΩ
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=15V, VGS=0V, f=1.0MHz
3298
1400
287
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=15V, ID=60A, VGS=10V,
RGEN=6Ω
VDS=15V, VGS=10V, ID=75A
20 38 ns
12 23 ns
113 198 ns
40 78 ns
48 55 nC
10 nC
27 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD VGS=0V, IS=75A
Maximum Body-Diode Continuous Current
IS
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
1.5 V
75 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-327.E
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UT75N03 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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