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Infineon Technologies |
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPA80R650CE
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
800VCoolMOS™CEPowerTransistor
IPA80R650CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower
MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance
andruggednesstoallowstabledesignsathighestefficiencylevel.
CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe
benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
•Qualifiedforconsumergradeapplications
Applications
LEDLightingandAdapterinQRFlybacktopology
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
800
650
V
mΩ
Qg.typ
45
nC
ID,pulse
24
A
Eoss@400V
3.3
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
IPA80R650CE
Package
PG-TO 220 FullPAK
Marking
8R650CE
RelatedLinks
see Appendix A
Final Data Sheet
2 Rev.2.1,2015-06-23
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