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PDF 8N65 Data sheet ( Hoja de datos )
| Número de pieza | 8N65 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
8N65
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 1.4Ω@VGS = 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65L-TA3-T
8N65G-TA3-T
8N65L-TF3-T
8N65G-TF3-T
8N65L-TF1-T
8N65G-TF1-T
8N65L-TF3T-T
8N65G-TF3T-T
8N65L-T2Q-T
8N65G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
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www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-591.D
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8N65
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
QW-R502-591.D
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 8N65.PDF ] | |
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