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IRFP1405PBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRFP1405PBF 데이터시트, 핀배열, 회로
PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.3m
S ID = 95A
S
GD
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC Junction-to-Case *
Rθcs Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient *
HEXFET® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
www.irf.com
Max.
160
110
95
640
310
2.0
± 20
530
1060
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/18/10


IRFP1405PBF 데이터시트, 핀배열, 회로
IRFP1405PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.058 –––
––– 4.2 5.3
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 95A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
77 ––– ––– S VDS = 25V, ID = 95A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 120 180
ID = 95A
Qgs Gate-to-Source Charge
––– 30 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 53 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr Rise Time
––– 160 –––
ID = 95A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 140 –––
––– 150 –––
ens RG = 2.6
VGS = 10V
LD Internal Drain Inductance
––– 5.0 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 13 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5600 –––
––– 1310 –––
––– 350 –––
––– 6550 –––
––– 920 –––
––– 1750 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 95
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 640
A showing the
integral reverse
––– ––– 1.3
––– 70 110
––– 170 260
ep-n junction diode.
V TJ = 25°C, IS = 95A, VGS = 0V
ens TJ = 25°C, IF = 95A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 95A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width 1.0ms; duty cycle 2%.
2
tested to this value in production.
www.irf.com




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Power MOSFET ( Transistor ) - International Rectifier