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Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
6N70Z
Preliminary
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N70Z is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70Z is universally applied in high efficiency
switch mode power supply.
FEATURES
* RDS(ON)=1.9Ω @ VGS=10V, ID=3A
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70ZL-T82-T
6N70ZG-T82-T
6N70ZL-TM3-T
6N70ZG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-82
TO-251
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-A02. a.
6N70Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage (Note 2)
VGSS ±20 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
6A
3.8 A
Pulsed
IDM 24 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
EAS
EAR
dv/dt
6A
300 mJ
13 mJ
2.5 V/ns
Power Dissipation
Linear Derarting Factor
SOT-82
TO-251
SOT-82
TO-251
PD
75 W
55 W
0.60 W/°C
0.44 W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SOT-82
TO-251
SOT-82
TO-251
SYMBOL
θJA
θJc
RATINGS
62.5
110
1.67
2.27
UNIT
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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