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MTB010N06I3 반도체 회로 부품 판매점

N-Channel Enhancement Mode Power MOSFET



CYStech Electronics 로고
CYStech Electronics
MTB010N06I3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
50A
RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB010N06I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06I3
CYStek Product Specification


MTB010N06I3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 4)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=40A, VDD=25V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 4)
(Note 4)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
60
±20
50
35
9.0
7.2
180
40
80
6
60
30
1.5
0.96
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
2.5
83
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
MTB010N06I3
CYStek Product Specification




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MTB010N06I3 mosfet

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N-Channel Enhancement Mode Power MOSFET - CYStech Electronics