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PDF HUF75344A3 Data sheet ( Hoja de datos )

Número de pieza HUF75344A3
Descripción N-Channel UltraFET Power MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8m
tm
Features
• RDS(on) = 6.5m( Typ.)@ VGS = 10V, ID = 75A
• RoHS compliant
Description
• This N-channel power MOSFET is produced using Fairchild
Semiconductor’s innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored change. It was designed for
use in applications where power efficiency is important, such
as switching regulators, switching converters, motro drives,
relay drivers, low-voltage bus switches, and power manage-
ment in portable and battery-operated products.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 130oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
S
Ratings
55
±20
75
300
1153
288.5
1.92
-55 to +175
300
Ratings
0.52
40
Units
V
V
A
A
mJ
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
HUF75344A3 Rev. A1
1
www.fairchildsemi.com

1 page




HUF75344A3 pdf
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
HUF75344A3 Rev. A1
5 www.fairchildsemi.com

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