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ON Semiconductor |
MMSF1308
Preferred Device
Power MOSFET
7 Amps, 30 Volts
N−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc−dc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• High Speed Switching Provides High Efficiency for DC/DC
Converter
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Max
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
IDM
PD
30
30
± 20
7.0
50
2.5
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
THERMAL RESISTANCE
Junction−to−Ambient (Note 1.)
RθJA
50 °C/W
1. When mounted on 1″ square FR−4 or G−10 board
(VGS = 10 V, @ 10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
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7 AMPERES
30 VOLTS
RDS(on) = 30 mW
N−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8
CASE 751
STYLE 12
1
S1308
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF1308R2
SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MMSF1308/D
MMSF1308
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 21 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω) (Note 1)
Gate Charge
(VDS = 15 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 7.0 Adc, VGS = 0 Vdc) (Note 1)
(IS = 7.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
3. Reflects typical values. Cpk =
Max limit − Typ
3 x SIGMA
4. Repetitive rating; pulse width limited by maximum junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
30
−
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
30
−
−
−
1.6
4.3
22
30
4.5
690
290
90
7.5
24
30
46
20
2.5
6.0
8.0
0.85
0.71
35
20
15
0.03
Max Unit
Vdc
−
− mV/°C
μAdc
1.0
10
100 nAdc
Vdc
2.5
− mV/°C
mΩ
30
39
− Mhos
970 pF
410
130
15 ns
48
60
92
30 nC
−
−
−
Vdc
1.0
−
− ns
−
−
− μC
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