파트넘버.co.kr FW389 데이터시트 PDF


FW389 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ON Semiconductor 로고
ON Semiconductor
FW389 데이터시트, 핀배열, 회로
Ordering number : ENA2066A
FW389
Power MOSFET
100V, 2A, 225m, –100V, –2A, 300m, Complementary Dual SOIC8
http://onsemi.com
Features
ON-resistance Nch : RDS(on)1=165mW(typ.)
Input Capacitance Nch : Ciss=490pF(typ.)
Pch : RDS(on)1=230mW(typ.)
Pch : Ciss=1000pF(typ.)
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW100ms)
VDSS
VGSS
ID
IDP
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
IDP
PD
PT
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
*1 N-Channel:VDD=10V, L=2mH, IAV=2A(Fig.1)
P-Channel:VDD=--10V, L=2mH, IAV=--2A(Fig.1)
*2 L≤2mH, single pulse
Conditions
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, (PW10s)
When mounted on ceramic substrate (2000mm2×0.8mm), (PW10s)
N-channel P-channel
100 --100
±20 ±20
2 --2
5 --5
8 --8
1.8
2.2
150
--55 to +150
5.3 5.3
2 --2
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
lectrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Ratings
min typ max
Unit
100 V
1 mA
±10 mA
1.5 2.6 V
2.9 S
165 225 mW
180 254 mW
190 275 mW
490 pF
34 pF
13 pF
9.3 ns
5.4 ns
42 ns
26 ns
Continued on next page.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003093/61312TKIM PA No. A2066-1/8


FW389 데이터시트, 핀배열, 회로
FW389
Continued from preceding page
Electrical Characteristics at Ta=25°C
Parameter
Symbol
N-channel]
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Gata Resistance
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Gata Resistance
Qg
Qgs
Qgd
VSD
Rg
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Rg
Conditions
VDS=50V, VGS=10V, ID=2A
IS=2A, VGS=0V
VDS=0V, VGS=0V, f=1MHz
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
VDS=0V, VGS=0V, f=1MHz
Ratings
min typ max
Unit
10
1.4
2.1
0.78
0
nC
nC
nC
1.2 V
12 W
--100
--1.2
0
4.7
230
240
250
1000
77
47
12
16
110
40
21
2.8
4.4
--0.79
--1
±10
--2.6
300
336
355
--1.2
50
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
W
Fig.1 Unclamped Inductive Switching Test Circuit
[N-channel]
[P-channel]
50
RG G
DL
FW389
50
RG G
DL
FW389
10V
0V
50S
VDD
0V
--10V
50S
VDD
No. A2066-2/8




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