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PDF HUFA76404DK8T Data sheet ( Hoja de datos )
| Número de pieza | HUFA76404DK8T | |
| Descripción | N-Channel Dual MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2005
HUFA76404DK8T
N-Channel Dual MOSFET
62V, 3.2A, 132mΩ
Features
rDS(ON) = 110mΩ (Typ.), VGS = 5V, ID = 3.2A
Qg(tot) = 3.8nC (Typ.), VGS = 5V
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Internal RG = 100Ω
Qualified to AEC Q101
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
Branding Dash
1
2
3
4
SO-8
5
SOURCE 1 (1)
GATE 1 (2)
SOURCE 2 (3)
GATE 2 (4)
DRAIN 1 (8)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
©2005 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
100 10
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
10ms
SINGLE PULSE
TJ
TA
=
=
MAX
25oC
RATED
0.2
RθJA=50oC/W
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 150oC
STARTING TJ = 25oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
Figure 6. Unclamped Inductive Switching
Capability
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
10
15
VGS = 10V
VGS = 5V
10 VGS = 3.5V
5 TJ = 150oC
TJ = 25oC
0
1.5
TJ = -55oC
2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4.0
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
180
160
ID = 3.6A
140
120
100 ID = 1A
80
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
5 VGS = 3V
0
0
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
VGS = 10V, ID = 3.6A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
HUFA76404DK8T Rev. B
5
www.fairchildsemi.com
5 Page 
SPICE Thermal Model
REV March 2004
HUFA76404DK8T
Copper Area =0.5 in2
CTHERM1 TH 8 1.2e-4
CTHERM2 8 7 4.6e-3
CTHERM3 7 6 5.0e-3
CTHERM4 6 5 1.6e-2
CTHERM5 5 4 4.5e-2
CTHERM6 4 3 1.3e-1
CTHERM7 3 2 6.7e-1
CTHERM8 2 TL 5.5
RTHERM1 TH 8 1.55
RTHERM2 8 7 1.9
RTHERM3 7 6 2.8
RTHERM4 6 5 9.8
RTHERM5 5 4 19
RTHERM6 4 3 22
RTHERM7 3 2 23
RTHERM8 2 TL 24
SABER Thermal Model
Copper Area = 0.5 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 =1.2e-4
ctherm.ctherm2 8 7 =4.6e-3
ctherm.ctherm3 7 6 =5.0e-3
ctherm.ctherm4 6 5 =1.6e-2
ctherm.ctherm5 5 4 =4.5e-2
ctherm.ctherm6 4 3 =1.3e-1
ctherm7 3 2 6.7e-1
ctherm8 2 tl 5.5
rtherm.rtherm1 th 8 =1.55
rtherm.rtherm2 8 7 =1.9
rtherm.rtherm3 7 6 =2.8
rtherm.rtherm4 6 5 =9.8
rtherm.rtherm5 5 4 =19
rtherm.rtherm6 4 3 =22
rtherm.rtherm7 3 2 =23
rtherm.rtherm8 2 tl =24
}
COMPONENT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.02 in2
9.0e-1
4.0e-1
1.4
39
42
48
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
Table 1. Thermal Models
0.14 in2
1.3e-1
6.0e-1
2.5
26
32
35
0.257 in2
1.5e-1
4.5e-1
2.2
20
31
38
tl AMBIENT
0.38 in2
1.5e-1
6.5e-1
3.0
20
29
31
0.493 in2
1.3e-1
6.7e-1
5.5
22
23
24
HUFA76404DK8T Rev. B
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HUFA76404DK8T.PDF ] | |
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