IRL3714PbF 반도체 회로 부품 판매점
SMPS MOSFET
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 International Rectifier |
PD - 95580
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
VDSS
20V
IRL3714PbF
IRL3714SPbF
IRL3714LPbF
HEXFET® Power MOSFET
RDS(on) max
20mΩ
ID
36A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714
D2Pak
IRL3714S
TO-262
IRL3714L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
0.50
–––
–––
Max.
3.2
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
07/20/04
IRL3714/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
20
–––
–––
–––
–––
0.022
15
21
––– V
––– V/°C
20 mΩ
28
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 14A
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 16V, VGS = 0V
––– ––– 100
VDS = 16V, VGS = 0V, TJ = 125°C
–––
–––
200
nA
VGS = 16V
––– ––– -200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
17 ––– ––– S VDS = 10V, ID = 14A
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 6.5 9.7
ID = 14A
––– 1.8 ––– nC VDS = 10V
Qgd
Qoss
Gate-to-Drain ("Miller") Charge
Output Gate Charge
––– 2.9 –––
––– 7.1 –––
VGS = 4.5V
VGS = 0V, VDS = 10V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 8.7 –––
VDD = 10V
––– 78 ––– ns ID = 14A
––– 10 –––
RG = 1.8Ω
––– 4.5 –––
VGS = 4.5V
Ciss Input Capacitance
––– 670 –––
VGS = 0V
Coss Output Capacitance
––– 470 –––
VDS = 10V
Crss Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
72
14
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
––– 36
––– 140
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
––– 0.88 –––
TJ = 125°C, IS = 18A, VGS = 0V
––– 35 53
––– 34 51
ns TJ = 25°C, IF = 18A, VR=10V
nC di/dt = 100A/µs
––– 35 53
––– 35 53
ns TJ = 125°C, IF = 18A, VR=10V
nC di/dt = 100A/µs
www.irf.com
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제조업체: International Rectifier
( ir )
IRL3714PbF mosfet
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