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PDF MMSF10N02Z Data sheet ( Hoja de datos )
| Número de pieza | MMSF10N02Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMSF10N02Z
Preferred Device
Power MOSFET
10 Amps, 20 Volts
N−Channel SO−8
EZFETst are an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true logic
level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain−to−source diode
has a very low reverse recovery time. EZFET devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 70°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
ID
IDM
PD
20 Vdc
20 Vdc
± 12 Vdc
10 Adc
7.0
80 Apk
2.5 Watts
Operating and Storage Temperature Range TJ, Tstg − 55 to
150
°C
Thermal Resistance − Junction to Ambient
RθJA
50 °C/W
Maximum Temperature for Soldering
TL 260 °C
1. When mounted on 1″ square FR−4 or G−10 board (VGS = 4.5 V, @
10 Seconds)
http://onsemi.com
10 AMPERES
20 VOLTS
RDS(on) = 15 mW
N−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8
CASE 751
STYLE 12
10N02Z
LYWW
1
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF10N02ZR2
SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MMSF10N02Z/D
1 page  
MMSF10N02Z
8
VDS
16
14
6 12
4
Q1
QT
Q2
10
VGS 8
6
2 Q3
ID = 10 A 4
TJ = 25°C
2
00
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000 VDD = 10 V
ID = 5 A
VGS = 4 V
TJ = 25°C
tf
tr
td(off)
100
td(on)
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
12
VGS = 0 V
10 TJ = 25°C
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
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| PDF Descargar | [ Datasheet MMSF10N02Z.PDF ] | |
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