WPM2009D 반도체 회로 부품 판매점
P-MOSFET
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 WillSEMI |
WPM2009D
-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced
using trench process that provides minimum on
resistance performance. WPM2009D is
enhancement power MOSFET with 2.0W power
dissipation mounting 1 in2 pad in a DFN3x3
package. This device is suited for high power
charging circuit of mobile phone application. It
also can be used in a high power switching
application.
WPM2009D
Http://www.willsemi.com
Bottom
DFN3x3-8L
Bottom
Features
z Max Rds(on) 42m @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench process
z DFN3x3-8L Package
z Pb-Free
Applications
z Battery charging
z Load Switch
z Power Switch
z DC-DC converter
Pin Connection
Top
WPM2009 = Part Number
YY = Year
WW = Week
Marking
Order Information
Device
Package
Shipping
WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Jan,2012 - Rev. 1.4
Maximum Ratings
(TA=25oC unless otherwise noted)
Symbol Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Drain Current – Continue Note1
Drain Current – Continue (t<5s) Note1
ID
Drain Current – Continue Note2
Drain Current – Pulsed (t<300us, Duty<2%) Note2
Power Dissipation – Note1
PD Power Dissipation – (t<5s) Note1
Power Dissipation – Note2
TJ Operation junction temperature range
TSG Storage temperature range
WPM2009D
Ratings
-20
12
-4.0
-4.9
-6.5
-24
1.0
1.5
2.0
150
-55~150
Unit
V
V
A
A
A
A
W
W
W
OC
OC
Thermal Resistance Ratings
Symbol Parameter
RTJA Thermal Resistance, Junction to Ambient – Note1
RTJA Thermal Resistance, Junction to Ambient – Note2
Max.
125
62
Unit
OC/W
OC/W
Note1: Surface mounted on a 2 OZ copper, recommend minimum pad, FR-4 board.
Note2: Surface mounted on a 2 OZ copper, 1 in2 pad with dual side, FR-4 board.
Note1
Will Semiconductor Ltd.
Note2
2 Jan,2012 - Rev. 1.4
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제조업체: WillSEMI
( willsemi )
WPM2009D mosfet
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[ WPM2009D.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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