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UBIQ |
QM3007S
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3007S is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3007S meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
62mΩ
ID
-5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT89 Pin Configuration
DD DD
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, -VGS @ -10V1
Continuous Drain Current, -VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
S SS G
Rating
-30
±20
-5
-3.8
-10
37
15
2.08
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Typ.
---
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Max.
85
60
Unit
℃/W
℃/W
Rev A.01 D041410
1
QM3007S
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-4A
VGS=-4.5V , ID=-2A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=-5V , ID=-3A
VDS=0V , VGS=0V , f=1MHz
VDS=-20V , VGS=-4.5V , ID=-5A
VDD=-15V , VGS=-10V , RG=3.3Ω
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
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-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.02
50
85
-1.5
4.32
---
---
---
5.5
24
5.22
1.25
2.3
18.4
11.4
39.4
5.2
463
82
68
Max.
---
---
62
100
-2.5
---
-1
-5
±100
---
48
---
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---
---
---
---
---
---
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Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=6A
Min.
6
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
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---
Typ.
---
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
-5
-10
-1
Unit
A
A
V
2
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