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Número de pieza | QM02N65U | |
Descripción | N-Ch 650V Fast Switching MOSFETs | |
Fabricantes | UBIQ | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de QM02N65U (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! QM02N65U
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2010-04-27 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM02N65U is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM02N65U meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
650V
RDSON
8Ω
ID
2A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LED Lighting
z Adapter/charger
TO251 Pin Configuration
Absolute Maximum Ratings
G DS
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
±30
2
1.3
4
16
3.4
40
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
3
Unit
℃/W
℃/W
Rev A.01 D102209
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet QM02N65U.PDF ] |
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