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PDF QM02N65D Data sheet ( Hoja de datos )

Número de pieza QM02N65D
Descripción N-Ch 650V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM02N65D
機密
1
2011-03-03 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM02N65D is the highest performance N-ch
MOSFETs with specialized high voltage
technology, which provide excellent RDSON and
gate charge for most of the SPS, Charger ,Adapter
and lighting applications .
The QM02N65D meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
650V
RDSON
8
ID
2A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LED Lighting
z Adapter/charger
TO252 Pin Configuration
D
Absolute Maximum Ratings
S
G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
±30
2
1.3
4
16
3.4
40
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
3
Unit
/W
/W
Rev A.02 D022211
1

1 page





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