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STMicroelectronics |
STD27N3LH5, STP27N3LH5
STU27N3LH5
N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
VDSS RDS(on) max
STD27N3LH5 30 V
0.019 Ω
STP27N3LH5
30 V
0.020 Ω
STU27N3LH5 30 V
0.020 Ω
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
ID
27 A
27 A
27 A
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
IPAK
3
2
1
3
1
DPAK
TO-220
3
2
1
Figure 1. Internal schematic diagram
D (TAB or 2)
G (1)
Table 1. Device summary
Order codes
STD27N3LH5
STU27N3LH5
STP27N3LH5
Marking
27N3LH5
27N3LH5
27N3LH5
S (3)
sc08440
Package
DPAK
IPAK
TO-220
Packaging
Tape and reel
Tube
Tube
March 2011
Doc ID 15617 Rev 3
1/21
www.st.com
21
Contents
Contents
STD27N3LH5, STP27N3LH5, STU27N3LH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 15617 Rev 3
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