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PDF QS6U22 Data sheet ( Hoja de datos )
| Número de pieza | QS6U22 | |
| Descripción | 2.5V Drive Pch+SBD MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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QS6U22
2.5V Drive Pch+SBD MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-20V
215mΩ
±1.5A
1.25W
lOutline
TSMT6
lFeatures
1) The QS6U22 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6
package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
<MOSFET>
Marking
U22
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Gate - Source voltage
VGSS
±12 V
Continuous drain current
ID ±1.5 A
Pulsed drain current
ID,
*1
pulse
±6.0
A
Continuous source current (body diode)
IS
-0.75
A
Pulsed source current (body diode)
IS,
*1
pulse
-6.0
A
Power dissipation
PD*3 0.9 W/element
Junction temperature
Tj 150 ℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/10
20150730 - Rev.001
1 page  
QS6U22
lElectrical characteristic curves <MOSFET>
Fig.1 Typical Capacitance vs. Drain -
Source Voltage
Datasheet
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/10 20150730 - Rev.001
5 Page 
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet QS6U22.PDF ] | |
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