파트넘버.co.kr QS5U21 데이터시트 PDF


QS5U21 반도체 회로 부품 판매점

2.5V Drive Pch+SBD MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
QS5U21 데이터시트, 핀배열, 회로
QS5U21
  2.5V Drive Pch+SBD MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-20V
200mΩ
±1.5A
1.25W
lOutline
TSMT5
 
 
      
      
 
 
 
      
lFeatures
1) The QS5U21 combines Pch MOSFET with a
  Schottky barrier diode in a single TSMT5
  package.
2) Low on-state resistance with fast swicthing
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Load switch, DC/ DC conversion
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
<MOSFET>
Marking
U21
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Gate - Source voltage
VGSS
±12 V
Continuous drain current
ID ±1.5 A
Pulsed drain current
ID,
*1
pulse
±6.0
A
Continuous source current (body diode)
IS
-0.75
A
Pulsed source current (body diode)
IS,
*1
pulse
-3.0
A
Power dissipation
PD*3 0.9 W/element
Junction temperature
Tj 150
      
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/10
20150730 - Rev.001    


QS5U21 데이터시트, 핀배열, 회로
QS5U21
          
lAbsolute maximum ratings (Ta = 25°C)
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
                Datasheet
Symbol
VRM
VR
IF
IFSM*2
PD*3
Tj
Value
25
20
1.0
3.0
0.7
150
Unit
V
V
A
A
W/element
<MOSFET + Di>
Parameter
Power dissipation
Range of storage temperature
Symbol
PD*3
Tstg
Value
1.25
-55 to +150
Unit
W/total
lElectrical characteristics (Ta = 25°C)
<MOSFET>
Parameter
Symbol
Conditions
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Zero gate voltage
drain current
Gate threshold voltage
Static drain - source
on - state resistance
Forward Transfer
Admittance
IDSS VDS = -20V, VGS = 0V
VGS(th) VDS = -10V, ID = -1mA
VGS = -4.5V, ID = -1.5A
RDS(on)*4 VGS = -4V, ID = -1.5A
VGS = -2.5V, ID = -0.75A
|Yfs|*4 VDS = -10V, ID = -0.75A
Values
Min. Typ. Max.
- - ±10
Unit
μA
-20 - - V
- - -1 μA
-0.7 - -2.0 V
- 160 200
- 180 240 mΩ
- 260 340
1.0 - - S
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/10
                                          
20150730 - Rev.001




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QS5U21 mosfet

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