파트넘버.co.kr RQ1E070RP 데이터시트 PDF


RQ1E070RP 반도체 회로 부품 판매점

Pch -30V -7A Power MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
RQ1E070RP 데이터시트, 핀배열, 회로
RQ1E070RP
Pch -30V -7A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-30V
17mW
-7A
1.5W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT8
(8)
(7)
(6)
(5)
(1)
(2)(3)
(4)
lInner circuit
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
UE
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
-30
7
28
20
1.5
0.55
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.11 - Rev.C


RQ1E070RP 데이터시트, 핀배열, 회로
RQ1E070RP
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 83.3 °C/W
- - 227 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
-30 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25°C
- -25 - mV/°C
Zero gate voltage drain current
IDSS VDS = -30V, VGS = 0V
-
- -1 mA
Gate - Source leakage current
IGSS VGS = 20V, VDS = 0V
-
- 10 mA
Gate threshold voltage
VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID = 1mA
ΔTj referenced to 25°C
- 3.9 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS= -10V, ID= -7A - 12 17
RDS(on) *5
VGS= -4.5V, ID= -3.5A
VGS= -4.0V, ID= -3.5A
-
-
17 24
mW
19 27
VGS= -10V, ID= -7A, Tj=125°C
-
26 37
RG f = 1MHz, open drain
-
5
-
W
gfs *5 VDS = -10V, ID = -7A
6.0
15
-
S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (20×20×0.8mm)
*5 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.11 - Rev.C




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