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ROHM Semiconductor |
RCX080N25
Nch 250V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
250V
600mW
8A
35W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Bulk
-
-
500
-
RCX080N25
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAS*3
PD
PD
Tj
Tstg
Value
250
8
4.3
32
30
4.66
4
35
2.23
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
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© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2013.02 - Rev.A
RCX080N25
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.57 °C/W
- - 56 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Forward transfer admittance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 250V, VGS = 0V
IDSS
Tj = 25°C
IGSS VGS = 30V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 4.0A
RDS(on) *5 VGS = 10V, ID = 4.0A
Tj = 125°C
gfs VDS = 10V, ID = 4.0A
Values
Min. Typ. Max.
250 -
-
- - 10
- - 100
3.0 - 5.0
- 460 600
- 910 1280
2.2 4.4
-
Unit
V
mA
nA
V
mW
S
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/12
2013.02 - Rev.A
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