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PDF RCX050N25 Data sheet ( Hoja de datos )
| Número de pieza | RCX050N25 | |
| Descripción | 10V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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RCX050N25
Data Sheet
10V Drive Nch MOSFET
RCX050N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCX050N25
Bulk
-
500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
5
IDP *1,3
IS
20
5
ISP *1
20
IAS *2
2.5
EAS *2
1.82
PD *4
30
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c*)
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
4.16
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
1 page  
RCX050N25
Data Sheet
1000
Fig.13 Reverse Recovery Time vs. Source Current
Ta=25°C
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1
Source Current : IS [A]
10
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001 0.001
Rth(ch-a)=61.4°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10
Pulse width : Pw (s)
100 1000
Fig.14 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
Ta=25°C
Single Pulse
10
1
0.1
0.01
0.1
PW = 100μs
PW = 1ms
PW = 10ms
1 10 100
Drain-Source Voltage : VDS [ V ]
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
5 Page | ||
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